2SD2150(RevA) データシートの表示（PDF） - ROHM Semiconductor

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2SD2150
(Rev.:RevA)

Low Frequency Transistor (20V, 3A)

ROHM Semiconductor 

Transistors

2SD2150

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

∗ Measured using pulse current.

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

40

20

6

−

−

−

120

−

−

Typ.

−

−

−

−

−

0.2

−

290

25

Max.

−

−

−

0.1

0.1

0.5

560

−

−

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC=50µA

IC=1mA

IE=50µA

VCB=30V

VEB=5V

IC/IB=2A/0.1A

∗

VCE=2V, IC=0.1A

VCE=2V, IE= −0.5A, f=100MHz

VCE=10V, IE=0A, f=1MHz

zPackaging specifications and hFE

Type

Package

Code

Basic ordering

hFE unit (pieces)

2SD2150 RS

Taping

T100

1000

hFE values are classified as follows :

Item

R

S

hFE

180 to 390 270 to 560

zElectrical characteristic curves

10

VCE=2V

5

2

1

0.5

Ta=100°C

25°C

0.2

−40°C

0.1

0.05

0.02

0.01

5m

2m

1m

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

2

20mA

18mA

16mA

1.6 14mA

1.2

0.8

0.4

12mA

Ta=25°C

10mA

8mA

6mA

4mA

2mA

0

IB=0A

0

0.2

0.4

0.6

0.8

1.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Grounded emitter output

characteristics ( )

5

50mA

45mA

40mA

4

3

2

1

35mA Ta=25°C

30mA

25mA

20mA

15mA

10mA

5mA

0

IB=0A

0

1

2

3

4

5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Grounded emitter output

characteristics ( )

Rev.A

2/3

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