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STTH3R02(2006) データシートの表示(PDF) - STMicroelectronics

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STTH3R02
(Rev.:2006)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH3R02 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
STTH3R02
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IFRM
Repetitive peak reverse voltage
Repetitive peak forward current(1)
tp = 5 µs, F = 5 kHz
IF(RMS) RMS forward current
DO-201AD / DO-15
SMC
IF(AV)
IFSM
Tstg
Tj
TL
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature(1)
DO-15 Tlead = 50° C
DO-201AD Tlead = 90° C
SMC Tc = 110° C
tp = 10 ms Sinusoidal
Maximum lead temperature for soldering during 10 s at 4 mm from case
1. On infinite heatsink with 10 mm lead length
200
V
110
A
70
A
70
3
A
75
A
-65 to + 175 ° C
175
°C
230
°C
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-l)
Rth(j-c)
DO-15
Junction to lead Lead Length = 10 mm on infinite heatsink
DO-201AD
Junction to case
SMC
Value
45
30
20
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
Tj = 25° C
VR = VRRM
IF = 9 A
VF(2) Forward voltage drop
Tj = 25° C
Tj = 100° C
IF = 3 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.04 IF2(RMS)
3
µA
3
30
1.20
0.89 1.0
V
0.76 0.85
0.70 0.80
2/9

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