STTH3R02(2006) データシートの表示（PDF） - STMicroelectronics

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STTH3R02
(Rev.:2006)

Ultrafast recovery diode

STMicroelectronics 

STTH3R02

Characteristics

Table 4.

Symbol

Dynamic characteristics

Parameter

trr Reverse recovery time

IRM Reverse recovery current

tfr Forward recovery time

VFP Forward recovery voltage

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IF = 3 A, dIF/dt = -200 A/µs,

VR = 160 V, Tj = 125° C

IF = 3 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

IF = 3 A, dIF/dt = 100 A/µs,

Tj = 25° C

Min. Typ Max. Unit

24 30

ns

16 20

3.5 4.5 A

40

ns

1.9

V

Figure 1. peak current versus duty cycle

IM(A)

100

80

T

IM

dδ=tp/T

tp

60

P = 10 W

40

P = 5W

P = 3W

20

δ

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 2. Forward voltage drop versus

forward current (typical values)

IFM(A)

50

40

30

20

10

0

0.0

Tj=150°C

Tj=25°C

VFM(V)

0.5

1.0

1.5

2.0

Figure 3.

IFM(A)

50

40

30

20

10

0

0.0

Forward voltage drop versus

Figure 4.

forward current (maximum values)

Relative variation of thermal

impedance junction to ambient

versus pulse duration - DO-201AD

(Epoxy printed circuit board FR4,

eCU = 35 µm)

Tj=150°C

Tj=25°C

VFM(V)

0.5

1.0

1.5

2.0

Zth(j-a)/Rth(j-a)

1.0

DO-201AD

0.9

Lleads=10mm

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-01

1.E+00

1.E+01

tP(s)

1.E+02

1.E+03

3/9

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