STTH3R02(2006) データシートの表示（PDF） - STMicroelectronics
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STTH3R02 Datasheet PDF : 9 Pages
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Characteristics
STTH3R02
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-15
(Epoxy printed circuit board FR4,
eCU = 35 µm)
Zth(j-a)/Rth(j-a)
1.0
DO-15
0.9
Lleads=10mm
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01
1.E+00
1.E+01
tP(s)
1.E+02
1.E+03
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMC
(Epoxy printed circuit board FR4,
eCU = 35 µm)
Zth(j-a)/Rth(j-a)
1.0
SMC
0.9
Scu=1cm²
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
1.E-01
tP(s)
1.E+00 1.E+01 1.E+02 1.E+03
Figure 7.
C(pF)
100
Junction capacitance versus
reverse applied voltage (typical
values)
F=1MHz
Vosc=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 8. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
80
IF=3A
70
VR=160V
60
50
40
30
20
10
0
10
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
Figure 9. Reverse recovery time versus dIF/dt Figure 10. Peak reverse recovery current
(typical values)
versus dIF/dt (typical values)
tRR(ns)
60
50
40
30
20
10
0
10
IF=3A
VR=160V
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
IRM(A)
8
IF=3A
7
VR=160V
6
5
4
3
2
1
0
10
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
4/9
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