STTH3R02RL データシートの表示（PDF） - STMicroelectronics
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STTH3R02RL Datasheet PDF : 9 Pages
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STTH3R02
Characteristics
Symbol
Parameter
Table 5. Dynamic characteristics
Test conditions
Min. Typ. Max. Unit
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C
trr Reverse recovery time
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C
IRM
Reverse recovery current
IF = 3 A, dIF/dt = -200 A/µs,
VR = 160 V, Tj = 125 °C
tfr
Forward recovery time
IF = 3 A, dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C
VFP
Forward recovery voltage
IF = 3 A, dIF/dt = 100 A/µs,
Tj = 25 °C
24
30
ns
16
20
3.5
4.5
A
40
ns
1.9
V
Figure 1. peak current versus duty cycle
IM(A)
100
80
T
IM
dδ=tp/T
tp
60
P = 10 W
40
P = 5W
P = 3W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 2. Forward voltage drop versus forward
current (typical values)
IFM(A)
50
40
30
20
10
0
0.0
Tj=150°C
Tj=25°C
VFM(V)
0.5
1.0
1.5
2.0
Figure 3. Forward voltage drop versus forward
current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-201AD
IFM(A)
50
40
30
20
10
0
0.0
0.5
Tj=150°C
1.0
Tj=25°C
1.5
VFM(V)
2.0
Zth(j-a)/Rth(j-a)
1.0
Epoxy printed circuit board FR4, eCU = 35 µm
0.9
0.8
DO-201AD
Lleads=10 mm
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01
1.E+00
1.E+01
1.E+02
tP(s)
1.E+03
DocID12359 Rev 3
3/9
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