STTH3R02S データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
STTH3R02S Datasheet PDF : 9 Pages
| |||
Characteristics
STTH3R02
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration - DO-15
Zth(j-a)/Rth(j(-ja-a))
1.0
Epoxy printed circuit board FR4, eCU = 35 µm
0.9
0.8
DO-15
Lleads=10 mm
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01
1.E+00
1.E+01
1.E+02
tP(s)
1.E+03
Figure 6. Relative variation of thermal
impedance junction to ambient versus pulse
duration - SMC
Zth(j-a)/Rth(j-a)
1.0
Epoxy printed circuit board FR4, eCU = 35 µm
0.9
0.8
SMC
0.7
Scu=1 cm²
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
1.E-01
1.E+00 1.E+01
1.E+02
tP(s)
1.E+03
Figure 7. Junction capacitance versus reverse
applied voltage (typical values)
C(pF)
100
F=1MHz
Vosc=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
Figure 8. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
80
IF=3A
70
VR=160V
60
50
40
Tj=125°C
30
20
10
0
10
Tj=25°C
100
dIF/dt(A/µs)
1000
Figure 9. Reverse recovery time versus dIF/dt
(typical values)
tRR(ns)
60
50
40
30
20
10
0
10
IF=3A
VR=160V
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
Figure 10. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
8
IF=3A
7
VR=160V
6
5
4
3
2
1
0
10
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
4/9
DocID12359 Rev 3
Share Link: 