BGU7042,115 データシートの表示（PDF） - NXP Semiconductors.
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BGU7042,115 Datasheet PDF : 11 Pages
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NXP Semiconductors
BGU7042
1 GHz wideband low-noise amplifier with bypass
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C; typical values at VCC = 3.3 V; ZS = ZL = 75 ; Rbias = 7.5 ; 40 MHz f1 1000 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
supply voltage
total supply current
RF input AC coupled
Gp = 10 dB mode
bypass mode
3.1 3.3 3.5 V
[1] -
38 -
mA
[1] -
3-
mA
Tamb
NF
ambient temperature
noise figure
Gp = 10 dB mode
bypass mode
10 - +70 C
[1] -
3.8 -
dB
[1] -
2.5 -
dB
PL(1dB) output power at 1 dB gain
compression
1 GHz; Gp = 10 dB
mode
[1] -
12 -
dBm
IP3O output third-order intercept point Gp = 10 dB mode
[1][2] -
29 -
dBm
[1] Mode depends on setting of VCTRL; see Table 8.
[2] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2 f2 f1, where
f2 = f1 1 MHz. Input power Pi = 10 dBm.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
RF_OUT
VCC
n.c.
CTRL
GND
RF_IN
Simplified outline Graphic symbol
654
32
6
1
123
54
sym141
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BGU7042
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
BGU7042
Marking code
*VB
Description
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
BGU7042
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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