STP24N60DM2 データシートの表示（PDF） - STMicroelectronics

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STP24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB24N60DM2, STP24N60DM2, STW24N60DM2

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25 °C

ID Drain current (continuous) at TC = 100 °C

(1)

IDM Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

(2)

dv/dt Peak diode recovery voltage slope

(3)

dv/dt MOSFET dv/dt ruggedness

Tstg Storage temperature

Tj Max. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 18 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.

3. VDS ≤ 480 V

± 25

18

11

72

150

40

50

- 55 to 150

Unit

V

A

A

A

W

V/ns

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

(1)

Rthj-pcb Thermal resistance junction-pcb max

Rthj-amb Thermal resistance junction-ambient max

1. When mounted on 1 inch² FR-4, 2 Oz copper board

D2PAK

30

Value

TO-220

0.83

62.5

Unit

TO-247

°C/W

°C/W

50

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not

IAR repetitive (pulse width limited by Tjmax )

Single pulse avalanche energy (starting

EAS Tj=25°C, ID= IAR; VDD=50)

3.5

A

180

mJ

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