FQB6N80TM データシートの表示（PDF） - Fairchild Semiconductor

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FQB6N80TM

N-Channel QFET® MOSFET

Fairchild Semiconductor 

FQB6N80

N-Channel QFET® MOSFET

800 V, 5.8 A, 1.95 Ω

November 2013

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

• 5.8 A, 800 V, RDS(on) = 1.95 Ω (Max.) @ VGS = 10 V,

ID = 2.9 A

• Low Gate Charge (Typ. 31 nC)

• Low Crss (Typ. 14 pF)

• 100% Avalanche Tested

• RoHS Compiant

D

D

G

S

D2-PAK

G

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TA = 25°C) *

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering,

1/8" from case for 5 seconds.

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

FQB6N80TM

800

5.8

3.67

23.2

± 30

680

5.8

15.8

4.0

3.13

158

1.27

-55 to +150

300

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W

W/°C

°C

°C

Thermal Characteristics

Symbol

Parameter

RJC

RJA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

FQB6N80TM

0.79

62.5

40

Unit

oC/W

©2008 Fairchild Semiconductor Corporation

1

FQB6N80 Rev. C1

www.fairchildsemi.com

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