FQB6N80TM データシートの表示（PDF） - Fairchild Semiconductor
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FQB6N80TM Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQB6N80TM
Top Mark
FQB6N80
Package
D2-PAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.9
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS =10 V, ID =2.9 A
VDS = 50 V, ID = 2.9 A
3.0 --
5.0
V
-- 1.5 1.95
Ω
-- 5.9
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1150 1500 pF
-- 125 160
pF
--
14
18
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400 V, ID = 5.8 A,
RG = 25 Ω
--
30
70
ns
--
70 150
ns
--
65 140
ns
(Note 4)
--
45 100
ns
VDS = 640 V, ID = 5.8 A,
--
31
nC
VGS = 10 V
-- 7.1
--
nC
(Note 4) --
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.8 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 5.8 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 38 mH, IAS = 5.8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 5.8 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
5.8
A
--
--
23.2
A
--
--
1.4
V
-- 650
--
ns
-- 5.7
--
µC
©2008 Fairchild Semiconductor Corporation
2
FQB6N80 Rev. C1
www.fairchildsemi.com
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