74HC541DB データシートの表示（PDF） - NXP Semiconductors.
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74HC541DB Datasheet PDF : 19 Pages
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NXP Semiconductors
74HC541; 74HTC541
Octal buffer/line driver; 3-state
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for test circuit, see Figure 8.
Symbol Parameter
Conditions
tt
transition time
CPD
power dissipation
capacitance
74HCT541
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
per package;
VI = GND to VCC
tpd
propagation delay An to Yn; see Figure 6
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
ten
enable time
OEn to Yn; see Figure 7
VCC = 4.5 V
tdis
disable time
OEn to Yn; see Figure 7
VCC = 4.5 V
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation per package;
capacitance
VI = GND to VCC 1.5 V
Tamb = 25 C
Min Typ Max
[2]
Tamb = 40 C to +125 C Unit
Max (85 C) Max (125 C)
- 14 60
75
-
5 12
15
-
4 10
13
[3] -
37
-
-
90
ns
18
ns
15
ns
-
pF
[1]
- 15 28
35
- 12 -
-
[1]
- 21 35
44
[1]
- 21 35
44
[2] -
5 12
15
[3] -
39
-
-
42
ns
-
ns
53
ns
53
ns
18
ns
-
pF
[1] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
74HC_HCT541
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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