EMH2 データシートの表示（PDF） - ROHM Semiconductor

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EMH2

General purpose (dual digital transistors)

ROHM Semiconductor 

EMH2 / UMH2N / IMH2A

lAbsolute maximum ratings (Ta = 25°C)

<For DTr1 and DTr2 in common>

Parameter

Supply voltage

Input voltage

Output current

Collector current

EMH2

Power dissipation

UMH2N

IMH2A

Junction temperature

Range of storage temperature

Datasheet

Symbol

Values

Unit

VCC

50

V

VIN

-10 to 40

V

IO

30

mA

IC(MAX)*1

100

mA

PD*2*3

150

PD*2*3

150

mW

PD*2*4

300

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

<For DTr1 and DTr2 in common>

Parameter

Symbol

Conditions

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

VI(off)

VI(on)

VO(on)

II

IO(off)

GI

R1

R2/R1

VCC = 5V, IO = 100μA

VO = 0.3V, IO = 2mA

IO = 10mA, II = 0.5mA

VI = 5V

VCC = 50V, VI = 0V

VO = 5V, IO = 5mA

-

-

Transition frequency

f

*1

T

VCE = 10V, IE = -5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Values

Unit

Min. Typ. Max.

-

- 0.5

V

3.0 -

-

- 100 300 mV

-

- 180 μA

-

- 500 nA

68

-

-

-

32.9 47 61.1 kΩ

0.8 1.0 1.2 -

- 250 - MHz

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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20151001 - Rev.002

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