FDMC8010 データシートの表示（PDF） - Fairchild Semiconductor
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FDMC8010 Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 30 A
8
6
4
VDD = 12 V
VDD = 15 V
VDD = 18 V
2
0
0
20
40
60
80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
Ciss
Coss
1000
Crss
f = 1 MHz
VGS = 0 V
100
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
TJ = 25 oC
TJ = 100 oC
10
TJ = 125 oC
200
150
VGS = 10 V
100
VGS = 4.5 V
50 Limited by Package
RθJC = 2.3 oC/W
1
0.001
0.01 0.1
1
10
tAV, TIME IN AVALANCHE (ms)
100 500
Figure 9. Unclamped Inductive
Switching Capability
200
100
100 μs
10
1 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1 ms
10 ms
100 ms
1s
10 s
DC
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
3000
1000
100
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
4
FDMC8010 Rev.C1
www.fairchildsemi.com
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