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BC846BPDW1T1 データシートの表示(PDF) - ON Semiconductor

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BC846BPDW1T1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CEO
V
65
45
30
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846 Series
BC847B Only
BC848 Series
V(BR)CES
V
80
50
30
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)CBO
V
80
50
30
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846 Series
BC847 Series
BC848 Series
V(BR)EBO
V
6.0
6.0
5.0
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
15
nA
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
hFE
150
270
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
200
290
475
420
520
800
VCE(sat)
0.25
V
0.6
VBE(sat)
0.7
V
0.9
VBE(on)
580
660
700
mV
770
fT
100
MHz
Cobo
4.5
pF
NF
dB
10
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