BC846BPDW1T1 データシートの表示（PDF） - ON Semiconductor
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BC846BPDW1T1 Datasheet PDF : 10 Pages
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL PNP CHARACTERISTICS — BC846
VCE = −5.0 V
TA = 25°C
2.0
1.0
0.5
0.2
−0.1 −0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
−1.0
TJ = 25°C
−0.8
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
−2.0
−1.6
IC =
−1.2 −10 mA
−20 mA
−50 mA −100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02 −0.05 −0.1
−0.2 −0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0 −10 −20
Figure 9. Collector Saturation Region
−1.0
−1.4
−1.8
qVB for VBE
−2.2
−55°C to 125°C
−2.6
−3.0
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
40
TJ = 25°C
20
Cib
10
8.0
6.0
Cob
4.0
2.0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
−50 −100
500 VCE = −5.0 V
200
100
50
20
−1.0
−10
−100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current−Gain − Bandwidth Product
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