BAT60BE6327 データシートの表示（PDF） - Unspecified

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BAT60BE6327

Silicon Schottky Diode

Unspecified 

Silicon Schottky Diode

• High current rectifier Schottky diode with

very low VF drop (typ. 0.24 V at IF = 10mA)

• For power supply applications

• For clamping and protection in

low voltage applications

• For detection and step-up-conversion

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BAT60B...

BAT60B



ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BAT60B

Package

SOD323

Configuration

single

Marking

white/5

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage2)

Forward current

VR

10

V

IF

3

A

Non-repetitive peak surge forward current

I FSM

5

(t ≤ 10ms)

Total power dissipation

Ptot

1350

mW

TS ≤ 28°C

Junction temperature

Tj

150

°C

Operating temperature range

Top

-55 ... 125

Storage temperature

Tstg

-55 ... 150

1Pb-containing package may be available upon special request

2For TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage.

1

2007-04-19

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