NXP Semiconductors
BAT74
Schottky barrier double diode
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BAT74
-
plastic surface-mounted package; 4 leads
Version
SOT143B
4. Marking
Table 4. Marking codes
Type number
BAT74
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
*L4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR
reverse voltage
-
IF
forward current
-
IFRM
repetitive peak forward
tp ≤ 1 s; δ ≤ 0.5
-
current
IFSM
non-repetitive peak forward tp < 10 ms
-
current
Ptot
total power dissipation
Tamb ≤ 25 °C
-
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Double diode operation
VR
reverse voltage
-
[1] -
IF
forward current
[2] -
IFRM
repetitive peak forward
tp ≤ 1 s; δ ≤ 0.5
-
current
Max Unit
30
V
200
mA
300
mA
600
mA
230
mW
125
°C
+125 °C
+150 °C
30
V
60
V
110
mA
200
mA
[1] Series connection.
[2] If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one
diode is in reverse operation and the other is in forward operation at the same moment, total device current
is max. 200 mA.
BAT74_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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