NXP Semiconductors
BAT74
Schottky barrier double diode
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1] Refer to SOT143B standard mounting conditions.
7. Characteristics
Min Typ Max Unit
[1] -
-
500 K/W
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR
reverse current
VR = 25 V
Cd
diode capacitance VR = 1 V; f = 1 MHz
trr
reverse recovery
time
Min Typ
-
-
[1] -
-
-
-
-
-
-
-
[2] -
-
-
-
[3] -
-
[1] Temperature coefficient of forward voltage −0.6 %/K.
[2] Pulse test: tp = 300 μs; δ = 0.02.
[3] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
240
320
400
500
800
2
10
5
Unit
mV
mV
mV
mV
mV
μA
pF
ns
BAT74_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2010
© NXP B.V. 2010. All rights reserved.
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