BCV28E6327 データシートの表示（PDF） - Infineon Technologies

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BCV28E6327

PNP Silicon Darlington Transistors

Infineon Technologies 

BCV28, BCV48

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VCEsat

-

-

1V

Base-emitter saturation voltage 1)

IC = 100 mA, IB = 0.1 mA

VBEsat

-

-

1.5

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

fT

- 200 - MHz

Ccb

-

4.5

- pF

1) Pulse test: t ≤ 300µs, D = 2%

3

Jul-12-2001

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