BF998WR,115 データシートの表示（PDF） - NXP Semiconductors.
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BF998WR,115 Datasheet PDF : 13 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
24
ID
(mA)
16
MGC471
3V
VG2 S = 4 V
2V
1V
8
0V
0
1
0
1
VG1 S (V)
VDS = 8 V.
Tamb = 25 C.
Fig.3 Transfer characteristics; typical values.
24
ID
(mA)
16
MGC470
VG1 S =
0.4 V
0.3 V
0.2 V
0.1 V
0V
8
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
0
0
2
4
6
8
10
VDS (V)
VG2-S = 4 V.
Tamb = 25 C.
Fig.4 Output characteristics; typical values.
24
ID
(mS)
16
8
MGC472
max typ
min
0
−1600 −1200
−800
−400
0
400
VG1 (mV)
30
y fs
(mS)
24
18
12
MGC473
4V
3V
2V
1V
6
VG2 − S = 0 V
0.5 V
0
0
4
8
12
16
20
ID (mA)
VDS = 8 V; VG2 = 4 V; Tamb = 25 C.
Fig.5 Drain current as a function of gate 1 voltage;
typical values.
VDS = 8 V; Tamb = 25 C.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
1997 Sep 05
5
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