BF998WR,115 データシートの表示（PDF） - NXP Semiconductors.
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BF998WR,115 Datasheet PDF : 13 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
30
y fs
(mS)
24
18
12
6
0
−1
MGC474
VG2 S = 4 V
3V
2V
1V
0V
0
1
VG1-S (V)
VDS = 8 V; Tamb = 25 C.
Fig.7 Forward transfer admittance as a function
of gate 1 voltage; typical values.
1.5
Cos
(pF)
1.4
MGC475
1.3
1.2
1.1
1.0
4
6
ID =
12 mA
10 mA
8 mA
8
10
12
14
VDS(V)
VG2-S = 4 V; f = 1 MHz; Tamb = 25 C.
Fig.8 Output capacitance as a function of
drain-source voltage; typical values.
2.4
Cis
(pF)
2.2
2.0
1.8
1.6
1.4
−2.4
−1.6
−0.8
MGC476
0
0.8
VG1-S (mV)
2.4
Cis
(pF)
2.3
MGC477
2.2
2.1
2.0
6
4
2
0
−2
VG2-S (V)
VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb = 25 C.
Fig.9 Gate 1 input capacitance as a function of
gate 1-source voltage; typical values.
VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb = 25 C.
Fig.10 Gate 1 input capacitance as a function of
gate 2-source voltage; typical values.
1997 Sep 05
6
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