BF998WR データシートの表示（PDF） - NXP Semiconductors.
部品番号
コンポーネント説明
メーカー
BF998WR Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
10
y is
(mS)
1
MGC466
b is
10 1
10 2
10
g is
102
f (MHz)
10 3
VDS = 8 V; VG2-S = 4 V.
ID = 10 mA; Tamb = 25 C.
Fig.11 Input admittance as a function of the
frequency; typical values.
10 3
y rs
(μS)
10 2
10
MGC467
10 3
ϕ rs
(deg)
ϕ rs
10 2
y rs
10
1
10
1
102
f (MHz)
10 3
VDS = 8 V; VG2-S = 4 V.
ID = 10 mA; Tamb = 25 C.
Fig.12 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 2
y fs
(mS)
10
MGC468
10 2
ϕ fs
y fs
(deg)
ϕfs
10
10
yos
(mS)
1
10 1
MGC469
bos
gos
1
10
102
f (MHz)
1
10 3
10 2
10
102
f (MHz)
10 3
VDS = 8 V; VG2-S = 4 V.
ID = 10 mA; Tamb = 25 C.
Fig.13 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 8 V; VG2-S = 4 V.
ID = 10 mA; Tamb = 25 C.
Fig.14 Output admittance as a function of the
frequency; typical values.
1997 Sep 05
7
Share Link: 