BF996S データシートの表示（PDF） - Vishay Semiconductors
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BF996S Datasheet PDF : 8 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF996S
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
IG1SS
IG2SS
V(BR)G1-SS
V(BR)G2-SS
IDSS
V(P)G1-S
V(P)G2-S
gate cut-off current
gate cut-off current
gate-source breakdown voltage
gate-source breakdown voltage
drain current
gate-source cut-off current
gate-source cut-off current
CONDITIONS
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
IG1-S = 10 mA; VG2-S = VDS = 0
IG2-S = 10 mA; VG1-S = VDS = 0
VDS = 15 V; VG1-S = 0; VG2-S = 4 V
ID = 20 A; VDS = 15 V; VG2-S = 4 V
ID = 20 A; VDS = 15 V; VG1-S = 0
MIN.
6
6
4
MAX. UNIT
50 nA
50 nA
20 V
20 V
20
mA
2.5 V
2
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Yfs
Cig1-s
Cig2-s
Crs
Cos
F
GP
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
15
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = 3.3 mS; BS = BSopt
f = 200 MHz; GS = 2 mS; BS = BSopt;
GL = 0.5 mS; BL = BLopt
f = 800 MHz; GS = 3.3 mS;
BS = BSopt; GL = 1 mS; BL = BLopt
18
mS
2.3 2.6 pF
1.2
pF
25
fF
0.8
pF
1
dB
1.8
dB
25
dB
18
dB
April 1991
4
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