BUK7505-30A,127 データシートの表示（PDF） - NXP Semiconductors.
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BUK7505-30A,127 Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7505-30A
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 30 V; VGS = 0 V;
Tj = 175˚C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A
Tj = 175˚C
MIN.
30
27
2
1
-
-
-
-
-
-
TYP.
-
-
3.0
-
-
0.05
-
2
4.3
-
MAX.
-
-
4.0
-
4.4
10
500
100
5
9.3
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; Rload =1.2Ω;
VGS = 10 V; RG = 10 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
-
-
-
-
-
-
-
-
TYP.
4500
1500
960
35
130
155
150
3.5
MAX.
6000
1800
1300
55
200
230
220
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr
Reverse recovery time
IF = 75 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
75
A
-
- 240 A
- 0.85 1.2 V
-
1.1
-
V
- 400 -
ns
-
1.0
-
µC
September 1999
2
Rev 1.100
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