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BYG10D-M3/TR データシートの表示(PDF) - Vishay Semiconductors

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BYG10D-M3/TR
Vishay
Vishay Semiconductors Vishay
BYG10D-M3/TR Datasheet PDF : 5 Pages
1 2 3 4 5
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
100
10000
10
TJ= 150 °C
1
0.1
0.01
TJ= 25 °C
TJ= -40 °C
1000
100
0.001
0
0.5 1.0 1.5 2.0 2.5
Instantaneous Forward Voltage (V)
10
3.0
Fig. 1 - Forward Current vs. Forward Voltage
400
350
VR = VRRM
300
PR - Limit at 100 % VR
250
200
150
100
PR - Limit at 80 % VR
50
0
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
1.6
1.4
VR = VRRM
Half Sine-Wave
1.2
RθJL 25 K/W
1.0
0.8
0.6
0.4
0.2
0
0
RθJA 125 K/W
RθJA 150 K/W
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1000
VR = VRRM
100
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
5000
4000
TA = 100 °C
TA = 125 °C
3000
2000
TA = 75 °C
TA = 50 °C
TA = 25 °C
1000
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 6 - Reverse Recovery Time vs. Forward Current
Revision:21-Feb-2020
3
Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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