STS1DNC45 データシートの表示（PDF） - STMicroelectronics
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STS1DNC45 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 225 V, ID = 0.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 360 V, ID = 1.5 A,
VGS = 10 V
SWITCHING OFF
Symbol
Parameter
tr(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 360 V, ID = 1.5 A
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 0.4 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 0.4 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STS1DNC45
Min.
Typ.
6.7
4
7
1.3
3.2
Max.
10
Unit
ns
ns
nC
nC
nC
Min.
Typ.
8.5
12
18
Max.
Unit
ns
ns
ns
Min.
Typ.
225
530
4.7
Max.
0.4
1.6
1.6
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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