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FDC6301N データシートの表示(PDF) - Fairchild Semiconductor

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FDC6301N
Fairchild
Fairchild Semiconductor Fairchild
FDC6301N Datasheet PDF : 4 Pages
1 2 3 4
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
BVDSS/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate - Body Leakage Current
ON CHARACTERISTICS (Note 2)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 o C
25
25
V
mV /oC
VDS = 20 V, VGS = 0 V
1
µA
TJ = 55°C
10
µA
VGS = 8 V, VDS= 0 V
100 nA
VGS(th)/TJ
VGS(th)
RDS(ON)
Gate Threshold Voltage Temp.Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
ID(ON)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
ID = 250 µA, Referenced to 25 o C
-2.1
VDS = VGS, ID = 250 µA
0.65 0.85
VGS = 2.7 V, ID = 0.2 A
3.8
TJ =125°C
6.3
VGS = 4.5 V, ID = 0.4 A
3.1
VGS = 2.7 V, VDS = 5 V
0.2
VDS = 5 V, ID= 0.4 A
0.25
mV /oC
1.5
V
5
9
4
A
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
9.5
pF
6
pF
1.3
pF
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = 6 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50
5
10
ns
4.5 10
ns
tD(off)
Turn - Off Delay Time
4
8
ns
tf
Turn - Off Fall Time
3.2
7
ns
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 5 V, ID = 0.2 A,
VGS = 4.5 V
0.49 0.7 nC
0.22
nC
Qgd
Gate-Drain Charge
0.07
nC
Inverter Electrical Characteristics (TA = 25°C unless otherwise noted)
IO (off)
Zero Input Voltage Output Current
VCC = 20 V, VI = 0 V
1
µA
VI (off)
Input Voltage
VCC = 5 V, IO = 10 µA
0.5
V
VI (on)
VO = 0.3 V, IO = 0.005 A
1
V
RO (on)
Output to Ground Resistance
VI = 2.7 V, IO = 0.2 A
3.8
5
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air.
a. 140OC/W on a 0.125 in2 pad of
2oz copper.
b. 180OC/W on a 0.005 in2 of pad
of 2oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC6301N Rev.D

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