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NUD4011DR2G データシートの表示(PDF) - ON Semiconductor

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NUD4011DR2G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NUD4011DR2G Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NUD4011
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Input Voltage
Vin
200
V
Output Current
(For Vdrop 16 V) (Note 1)
Iout
70
mA
Output Voltage
Vout
198
V
Human Body Model (HBM)
ESD
500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Vdrop = Vin – 0.7 V VLEDs.
THERMAL CHARACTERISTICS
Characteristic
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature
Total Power Dissipation (Note 2)
Derating above 25°C (Figure 3)
Thermal Resistance, Junction–to–Ambient (Note 2)
Thermal Resistance, Junction–to–Lead (Note 2)
2. Mounted on FR4 board, 2 in sq pad, 1 oz coverage.
Symbol
TA
TJ
TSTG
PD
RqJA
RqJL
Value
40 to +125
150
55 to +150
1.13
9.0
110
77
Unit
°C
°C
°C
W
mW/°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Output Current1 (Note 3)
(Vin = 120 Vdc, Rext = 24 W, VLEDs = 90 V)
Output Current2 (Note 3)
(Vin = 200 Vdc, Rext = 68 W, VLEDs = 120 V)
Bias Current
(Vin = 120 Vdc, Rext = Open, Rshunt = 80 kW)
Voltage Overhead (Note 4)
3. Device’s pin 4 connected to the LEDs array (as shown in Figure 5).
4. Vover = Vin – VLEDs.
Symbol
Iout1
Iout2
IBias
Vover
Min
Typ
Max Unit
26.0 27.5 29.5
mA
11.5
14.0 15.5
mA
1.1
2.0
mA
5.0
V
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