ZDT1147 データシートの表示（PDF） - Zetex => Diodes

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ZDT1147

SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

Zetex => Diodes 

ZDT1147

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown V(BR)CBO -15

-35

Voltage

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

VCES

-12

-25

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

VCEO

-12

-25

V

IC=-10mA

Collector-Emitter

Breakdown Voltage

VCEV

-12

-25

V

IC=-100µA, VEB=+1V

Emitter-Base Breakdown V(BR)EBO -5

-8.5

Voltage

V

IE=-100µA

Collector Cutoff Current

Emitter Cutoff Current

Collector Emitter Cutoff

Current

ICBO

IEBO

ICES

-0.3

-100 nA

-0.3

-100 nA

-0.3

-100 nA

VCB=-12V

VEB=-4V

VCES=-10V

Collector-Emitter

Saturation Voltage

VCE(sat)

Base-Emitter

Saturation Voltage

VBE(sat)

-25

-50

mV

-70

-110 mV

-90

-130 mV

-115 -170 mV

-250 -380 mV

-950 -1050 mV

IC=-0.1A, IB=-1mA*

IC=-0.5A, IB=-2.5mA*

IC=-1A, IB=-6mA*

IC=-2A, IB=-20mA*

IC=-5A, IB=-50mA*

IC=-5A, IB=-50mA*

Base-Emitter Turn-On

Voltage

VBE(on)

-905 -1000 mV

IC=-5A, VCE=-2V*

Static Forward Current

hFE

Transfer Ratio

Transition Frequency

fT

270

450

250

400

850

200

340

150

250

90

160

60

IC=-10mA, VCE=-2V*

IC=-0.5A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-5A, VCE=-2V*

IC=-10A, VCE=-2V*

IC=-20A, VCE=-2V*

115

MHz IC=-50mA, VCE=-10V

f=50MHz

Output Capacitance

CCB

80

pF

VCB=-10V, f=1MHz

ton

Switching Times

toff

150

ns

IC=-4A, IB=-40mA, VCC=-10V

220

ns

IC=-4A, IB=±40mA,

VCC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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