ZXMP3A13F(2007) データシートの表示（PDF） - Diodes Incorporated.

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ZXMP3A13F
(Rev.:2007)

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMP3A13F

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

-30

20

-1.6

-1.3

-1.4

-6

-1.2

-6

625

5

806

6.4

-55 to +150

UNIT

V

V

A

A

A

A

mW

mW/°C

mW

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to ambient (a)

Junction to ambient (b)

SYMBOL

RθJA

RθJA

VALUE

200

155

UNIT

°C/W

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph.

ISSUE 1 - MAY 2007

2

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