MMBD352WT1 データシートの表示（PDF） - ON Semiconductor
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MMBD352WT1 Datasheet PDF : 4 Pages
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MMBD352WT1
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra−fast switching
circuits.
Features
• Very Low Capacitance − Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage − 0.5 Volts (Typ) @ IF = 10 mA
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1)
TA = 25°C
Derate above 25°C
200
mW
1.6
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
625
°C/W
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
1
ANODE
3
CATHODE/ANODE
2
CATHODE
3
1
2
SOT−323 (SC−70)
CASE 419
STYLE 9
MARKING DIAGRAM
M5 M
M5
= Device Code
M
= Date Code
ORDERING INFORMATION
Device
MMBD352WT1
MMBD352WT1G
Package
SOT−323
SOT−323
(Pb−Free)
Shipping†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
April, 2005 − Rev. 3
Publication Order Number:
MMBD352WT1/D
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