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10A05 データシートの表示(PDF) - CHONGQING PINGYANG ELECTRONICS CO.,LTD

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10A05
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD CHONGQING
10A05 Datasheet PDF : 1 Pages
1
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
10A05 THRU 10A10
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE50-1000V
CURRENT10.0A
FEATURES
·Low cost
·Low leakage
·Low forward voltage drop
·High current capability
·High surge current capability
R-6
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 2.08 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
10A05 10A1 10A2 10A4 10A6 10A8 10A10
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Current
at TA=75°C
Io
10.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
300
A
method)
Maximum Instantaneous forward Voltage at10.0A
DC
VF
1.0
V
Maximum DC Reverse Current
@ TA=25°C
at Rated DC Blocking Voltage
@ TA=100°C IR
Maximum Full Load Reverse Current Average,
Full Cycle .375(9.5mm) lead length at TL=75°C
10
500
µA
50
Typical Junction Capacitance (Note)
CJ
Typical Thermal Resistance
RθJA
150
pF
10
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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