15N06 データシートの表示（PDF） - Unisonic Technologies
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15N06 Datasheet PDF : 7 Pages
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15N06
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
60
Drain-Source Leakage Current
IDSS
VDS=Max Rating
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±15V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250 µA
1
On State Drain Current
ID(ON)
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
15
Static Drain-Source On-Resistance
RDS(ON) VGS=5V, ID=7.5A
Forward Transconductance (Note 1)
gFS
VDS>ID(ON)×RDS(ON)MAX, ID=7.5A
3
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=5V, VDD=30V, RG=4.7Ω,
ID=7.5A
VGS=10V, VDD=48V, RG=47Ω
ID=15A
VDD=40V, VGS=5V, ID=15A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
ISD=15 A,VGS=0V(Note 1)
Source-Drain Current
ISD
Source-Drain Current (Pulse)
ISDM
Notes: 1. Pulse width=300μs, duty cycle=1.5%
(Note 2)
2. Pulse width limited by safe operating area.
TYP MAX UNIT
V
250 µA
±100 nA
1.7 2.5 V
A
75 100 mΩ
5
S
700 950 pF
230 310 pF
80 110 pF
15 60
160 200
ns
52 80
100 140
ns
18 30
8
nC
9
1.5 V
15 A
60 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R502-260.F
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