15N20 データシートの表示（PDF） - Unisonic Technologies
部品番号
コンポーネント説明
メーカー
15N20 Datasheet PDF : 3 Pages
| |||
15N20
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
Continuous
ID
Pulsed
IDM
15
A
60
A
Single Pulsed Avalanche Current
IAS
15
A
Single Pulsed Avalanche Energy
EAS
340
mJ
Power Dissipation
PD
83
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
ELECTRICAL CHARACTERISTICS
RATINGS
110
1.5
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=200V, VGS=0V
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=10V, VDD=120V, ID=18A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, ID=1A, RG=25Ω,
VGS=10V, RL=30 Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=15A, VGS=0V
MIN TYP MAX UNIT
200
V
1 µA
+100 nA
-100 nA
3
5V
0.12 0.14 Ω
830 1080 pF
200 260 pF
25 33 pF
20 26 nC
5.6
nC
10
nC
16 40 ns
133 275 ns
38 85 ns
62 135 ns
15 A
60 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-717.a
Share Link: 