TS615IPWT(2004) データシートの表示（PDF） - STMicroelectronics

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TS615IPWT
(Rev.:2004)

Dual Wide-Band Operational Amplifier with High Output Current

STMicroelectronics 

TS615

Electrical Characteristics

3 Electrical Characteristics

Table 3. VCC = ±6V, Rfb=910Ω,Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

DC performance

Input Offset Voltage

Vio

∆Vio Differential Input Offset Voltage

Positive Input Bias Current

Iib+

Negative Input Bias Current

Iib-

ZIN+

ZIN-

CIN+

CMR

SVR

ICC

Input(+) Impedance

Input(-) Impedance

Input(+) Capacitance

Common Mode Rejection Ratio

20 log (∆Vic/∆Vio)

Supply Voltage Rejection Ratio

20 log (∆Vcc/∆Vio)

Total Supply Current per Operator

Tamb

Tmin. < Tamb < Tmax.

Tamb = 25°C

Tamb

Tmin. < Tamb < Tmax.

Tamb

Tmin. < Tamb < Tmax.

∆Vic = ±4.5V

Tmin. < Tamb < Tmax.

∆Vcc=±2.5V to ±6V

Tmin. < Tamb < Tmax.

No load

Dynamic performance and output characteristics

Open Loop Transimpedance

ROL

-3dB Bandwidth

BW Full Power Bandwidth

Gain Flatness @ 0.1dB

Tr Rise Time

Tf Fall Time

Ts Settling Time

SR Slew Rate

VOH High Level Output Voltage

VOL Low Level Output Voltage

Output Sink Current

Iout

Output Source Current

Vout = 7Vp-p, RL = 25Ω

Tmin. < Tamb. < Tmax.

Small Signal Vout<20mVp

AV = 12dB, RL = 25Ω

Large Signal Vout=3Vp

AV = 12dB, RL = 25Ω

Small Signal Vout<20mVp

AV = 12dB, RL = 25Ω

Vout = 6Vp-p, AV = 12dB, RL

= 25Ω

Vout = 6Vp-p, AV = 12dB, RL

= 25Ω

Vout = 6Vp-p, AV = 12dB, RL

= 25Ω

Vout = 6Vp-p, AV = 12dB, RL

= 25Ω

RL=25Ω Connected to GND

RL=25Ω Connected to GND

Vout = -4Vp

Tmin. < Tamb < Tmax.

Vout = +4Vp

Tmin. < Tamb < Tmax.

58

72

5

25

330

4.8

-350

330

Typ. Max.

1.25 3.5

2.1

2.5

6

30

7.8

3

15

3.2

82

54

1

63

61

79

78

14

17

21

8.9

40

26

7

10.6

12.2

50

410

5.1

-5.5 -5.2

-530

-440

420

365

Unit

mV

mV

µA

µA

kΩ

Ω

pF

dB

dB

mA

MΩ

MHz

MHz

ns

ns

ns

V/µs

V

V

mA

4/36

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