TS615IPWT(2004) データシートの表示（PDF） - STMicroelectronics

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TS615IPWT
(Rev.:2004)

Dual Wide-Band Operational Amplifier with High Output Current

STMicroelectronics 

Electrical Characteristics

TS615

Table 3. VCC = ±6V, Rfb=910Ω,Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Noise and distortion

eN

iNp

iNn

HD2

Equivalent Input Noise Voltage

Equivalent Input Noise Current (+)

Equivalent Input Noise Current (-)

2nd Harmonic distortion

(differential configuration)

3rd Harmonic distortion

HD3 (differential configuration)

2nd Order Intermodulation Product

(differential configuration)

IM2

3rd Order Intermodulation Product

(differential configuration)

IM3

F = 100kHz

F = 100kHz

F = 100kHz

Vout = 14Vp-p, AV = 12dB

F= 110kHz, RL = 50Ω diff.

Vout = 14Vp-p, AV = 12dB

F= 110kHz, RL = 50Ω diff.

F1= 100kHz, F2 = 110kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

F1= 370kHz, F2 = 400kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

F1 = 100kHz, F2 = 110kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

F1 = 370kHz, F2 = 400kHz

Vout = 16Vp-p, AV = 12dB

RL = 50Ω diff.

Typ.

2.5

15

21

-87

-83

-76

-75

-88

-87

Max. Unit

nV/√Hz

pA/√Hz

pA/√Hz

dBc

dBc

dBc

dBc

5/36

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