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RF2416 データシートの表示(PDF) - RF Micro Devices

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RF2416
RFMD
RF Micro Devices RFMD
RF2416 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Preliminary
4
RF2416
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
1.00
4
0.85
3.00
0.80
The RF2416 is a dual-band low noise amplifier with
0.65
sq.
0.65
0.30
0.60
4 PLCS
bypass switch designed for use as a front-end for
0.24 typ
950MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
0.30
2 0.18
10..2955sq.
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch. Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode. The device is packaged in a 3mmx3mm, 12 pin,
leadless chip carrier.
12°
max
0.05
0.01
0.75
0.50
0.50
0.23
0.13
4 PLCS
Dimensions in mm.
NOTES:
1 Shaded Pin is Lead 1.
2 Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm from terminal end.
3 Pin 1 identifier must exist on top surface of package by identification mark or
feature on the package body. Exact shape and size is optional.
4 Package Warpage: 0.05 mm max.
5 Die thickness allowable: 0.305 mm max.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
12
11
10
HB IN 1
9 HB OUT
HB BIAS 2
Logic
Control
8 HB SELECT
LB BIAS 3
7 LB SELECT
4
5
6
Package Style: LCC, 12-Pin, 3x3
Features
• Low Noise and High Intercept Point
• Dual-Band Application GSM900 and
DCS1800/PCS1900
• Power Down Control
• Switchable Gain
Ordering Information
RF2416
Dual-Band 2.7V Low Noise Amplifier
RF2416 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010810
4-199

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