CXG1047FN データシートの表示（PDF） - Sony Semiconductor

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CXG1047FN

Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications

Sony Semiconductor 

CXG1047FN

Power Amplifier Performance

Measurement Conditions: Ta = 25°C, Pin = +6dBm at 900MHz and Pin = +9dBm at 1750MHz,

pulsed DC conditions: 12.5% duty cycle 577µs burst duration.

All items are specified with the recommended schematic shown on page 6.

Item

Frequency

Frequency range (1)

Frequency range (2)

Output Power

(1) Output power –

900MHz

Symbol

GSM900

DCS1800

Condition

POUT

VDD = 3.5V

(2) Output power –

1750MHz

Power Control

Power control range

GSM900

Power control range

DCS1800

Off insertion loss –

900MHz

Off insertion loss –

1750MHz

Efficiency

Efficiency at 900MHz

POUT

POUT

PCTL

PCTL

Ins loss

Ins loss

PAE

Efficiency at 1750MHz

PAE

VSWR

Input VSWR at

GSM900/DCS1800

Harmonics Tx = 900MHz

2nd harmonics

3rd harmonics

4th harmonics

VDD = 3.5V

VDD = 4V, Pin = +7dBm

∗1

∗1

VDD = 0V

Pin = +7dBm

VDD = 0V

Pin = +7dBm

VDD = 3.5V

Pin = +6dBm

VDD = 3.5V

Pin = +9dBm

After matching cct

Po = 35dBm@3.5V

After matching cct

Po = 35dBm@3.5V

After matching cct

Po = 35dBm@3.5V

Min. Typ. Max. Unit

880

1710

915 MHz

1785 MHz

34.5 35.5

31.5 33

31.5 33

dBm

dBm

dBm

38

dB

35

dB

25

dB

35

dB

32 37

%

32 37

%

2:1 3:1

–30 –25 dBc

–35 –28 dBc

–40 –33 dBc

–3–

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