1N914 データシートの表示（PDF） - First Components International
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1N914 Datasheet PDF : 1 Pages
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Data Sheet
Description
250 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
JEDEC
D0-35
.060
.090
.120
1.00 Min.
.200
.018
.022
Features
n PLANAR PROCESS
n 250 mW POWER DISSIPATION
n INDUSTRY STANDARD D0-35
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...VRM
RMS Reverse Voltage...VR(rms)
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 100 mA
Maximum DC Reverse Current...IR
Maximum Frequency ...f
@ VR = 70v
Maximum Diode Capacitance, VR = 6V, f = 1MHz...CD
Maximum Reverse Recovery Time...tRR
1N914
Units
1N914
80
Volts
80
Volts
............................................. 100 ............................................... mAmps
............................................. 300 ............................................... mAmps
............................................. 250 ............................................... mW
......................................... -25 to 85 .......................................... °C
......................................... -55 to 125 .......................................... °C
............................................. 1.2 ............................................... Volts
............................................. 0.1 ...............................................
............................................. 100 ...............................................
............................................. 3.5 ...............................................
............................................. 4.0 ...............................................
µAmps
MHz
pF
ns
PVV = 100nS
.01 uF
Device Under Test
5K Ohms
50 Ohms
IF
IR
Output
Tr r
0.1 IR
Page 8-2
RG = 50 Ohms
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