1S2076A データシートの表示（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd

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1S2076A

Silicon Epitaxial Planar Diode for High Speed Switching

Shenzhen Luguang Electronic Technology Co., Ltd 

1S2076A

Features

• Low capacitance. (C = 3.0pF max)

• Short reverse recovery time. (trr = 8.0ns max)

• High reliability with glass seal.

Absolute Maximum Ratings (Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average forward current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

Symbol

VRM

VR

I FM

I FSM *

IO

Pd

Tj

Tstg

1

Value

70

60

450

1

150

250

175

–65 to +175

2

Cathode band

1. Cathode

2. Anode

Unit

V

V

mA

A

mA

mW

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Forward voltage

Reverse current

Capacitance

VF

0.64 —

IR

—

—

C

—

—

Reverse recovery time trr*

—

—

Note: Reverse recovery time test circuit

Max

0.80

0.1

3.0

8.0

Unit

V

µA

pF

ns

Test Condition

IF = 10mA

VR = 30V

VR = 1V, f = 1MHz

IF = IR = 10mA, Irr = 1mA

Ordering Information

Type No.

1S2076A

Cathode band

Navy Blue

Package Code

DO-35

http://www.luguang.cn Email:lge@luguang.cn

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