1SS380 データシートの表示（PDF） - Galaxy Semi-Conductor
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1SS380 Datasheet PDF : 3 Pages
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Silicon Epitaxial Planar Diode
FEATURES
Small surface mounting type
High speed
Suitable for high packing density
Pb
Lead-free
Production specification
1SS380
APPLICATIONS
High speed switching
ORDERING INFORMATION
Type No.
Marking
1SS380
6D
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC Reverse Voltage
VR
35
V
Peak forward Current
IFSM
225
mA
Average Rectified Output Current
IO
100
mA
Surge current(1s)
Isurge
400
mA
Power Dissipation
PD
200
mW
Junction temperature
Tj
125
℃
Storage temperature
TSTG
-55 to+125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF
1.2
V
Reverse current
IR
10
nA
Capacitance between terminals CT
5
pF
Conditions
IF=100mA
VR=20V
VR=0.5V,f=1MHz
B006
Rev.A
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