20CJQ030PBF_08 データシートの表示（PDF） - Vishay Semiconductors

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20CJQ030PBF_08

Schottky Rectifier, 2 x 1 A

Vishay Semiconductors 

20CJQ030

Vishay High Power Products Schottky Rectifier, 2 x 1 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop per leg

See fig. 1

VFM (1)

Maximum reverse leakage

current per leg

See fig. 2

Typical junction capacitance per leg

Typical series inductance per leg

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

IRM (1)

CT

LS

dV/dt

TEST CONDITIONS

1A

TJ = 25 °C

2A

1A

TJ = 125 °C

2A

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.50

0.59

0.42

0.52

0.1

15

120

6

4600

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and

storage temperature range

TJ (1), TStg

Maximum thermal resistance,

junction to ambient

Maximum thermal resistance,

junction to lead

RthJA

RthJL

DC operation

Approximate weight

Marking device

Case style SOT-223

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

- 55 to 150

UNITS

°C

65

°C/W

25

0.13

g

0.0045

oz.

2CJQE

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93271

Revision: 22-Aug-08

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