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21DQ04(2008) データシートの表示(PDF) - Vishay Semiconductors

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21DQ04
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
21DQ04 Datasheet PDF : 5 Pages
1 2 3 4 5
21DQ04
Schottky Rectifier, 2 A Vishay High Power Products
10
1000
TJ = 25°C
100
TJ = 150°C
TJ = 125°C
1
TJ = 25°C
10
0
10
20
30
40
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
DC
120
90
Square wave (D = 0.50)
60 80%Rated VR applied
0.1
0
0.3
0.6
0.9
1.2
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
30
= 1/8 inch
see note (1)
0
0
1
2
3
Average Forward Current - I F(AV) (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
100
10
1
0.1
0.01
0.001
TJ = 150°C
125°C
100°C
75°C
50°C
25°C
2
D = 0.20
1.6
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.2
RMS Limit
DC
0.8
0.4
0.0001
0
10
20
30
40
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0
1
2
3
Average Forward Current - I F(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TL = TJ - (Pd + PdREV) x RthJL;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93279
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3

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