2N3019 データシートの表示（PDF） - Continental Device India Limited
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2N3019 Datasheet PDF : 4 Pages
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
DC Current Gain
hFE*
2N3019
2N3020
hFE*
2N3019
2N3020
hFE*
2N3019
2N3020
hFE*
2N3019
2N3020
hFE*
2N3019
2N3020
hFE*
2N3019
IC=0.1mA,VCE=10V
50
30
IC=10mA,VCE=10V
90
40
IC=150mA,VCE=10V
100
40
IC=500mA,VCE=10V
50
30
IC=1A,VCE=10V
15
15
IC=150mA,VCE=10V
Tc= -55ºC
40
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
2N3019
2N3020
| hfe |
IC=1mA, VCE=5V, f=1KHz
80
30
Transition Frequency
fT
2N3019
2N3020
IC=50mA, VCE=10V
f=20MHz
100
80
Output Capacitance
Input Capacitance
Noise Figure
Collector Base Time Constant
2N3019
Cob
Cib
NF
rbb'cb'c
*Pulse Test: Pulse Width <300µs, Duty Cycle <1.0%
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
IC=100µA, VCE=10V
Rs=1KΩ,f=1KHz
IC=10mA,VCB=10V, f=4MHz
f=1MHz
MAX UNITS
100
120
300
120
100
400
200
MHz
MHz
12
pF
60
pF
4
dB
400
ps
Continental Device India Limited
Data Sheet
Page 2 of 4
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