2N3108 データシートの表示（PDF） - Comset Semiconductors
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2N3108 Datasheet PDF : 3 Pages
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NPN 2N3108 – 2N3110
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
Tamb = 150°C
-
ICES
Collector Cutoff Current VCE = 60 V, VBE = 0
-
IEBO
VCBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
hFE
fT
CEBO
CCBO
Emitter Cutoff Current
VBE = 5.0 V, IC = 0
-
Collector-Base
Breakdown Voltage
IC = 100 µA, IE = 0
2N3108 100
2N3110 80
Collector-emitter
Breakdown Voltage
IC = 30 mA, IB = 0
2N3108 60
2N3110 40
Emitter-Base Breakdown
Voltage
IE = 100 µA, IC = 0
7
Collector-Emitter
IC = 150 mA, IB = 15 mA
-
saturation Voltage
IC = 1 A, IB = 100 mA
-
Base-Emitter saturation IC = 150 mA, IB = 15 mA
-
Voltage
IC = 1 A, IB = 100 mA
-
IC = 150 mA, VCE = 1 V
40
DC Current Gain
IC = 0.1 mA, VCE = 10 V
20
IC = 500 mA, VCE = 10 V
25
IC = 150 mA, VCE = 10 V
Tamb = -55°C
15
Transition frequency
IC = 50 mA, VCE = 10 V
f = 20MHz
60
Emitter-Base
Capacitance
IC = 0, VEB = 0.5 V
f = 1MHz
-
Collector-Base
Capacitance
IE = ie =0, VCB = 10 V 2N3108 -
f = 1MHz
2N3110 -
Typ Max Unit
- 10 µA
- 10 nA
- 10 nA
-
-
-
-
V
-
-
-
-
V
-
-
V
-
-
0.25
1
V
-
-
1.1
2
V
- 120
-
-
-
-
-
-
-
- MHz
- 80 pF
-
-
20
25
pF
SWITCHING TIMES
Symbol
ton
Turn-on time
toff
Turn-off time
Ratings
IC = 150 mA; IB1 = 7.5 mA,
VCC = 20 V
IC = 150 mA
IB1 = -IB2 = 7.5 mA
VCC = 20 V
Value
200
600
Unit
ns
08/08/2012
COMSET SEMICONDUCTORS
2/3
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