2N3442(2012) データシートの表示（PDF） - Comset Semiconductors

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2N3442
(Rev.:2012)

HIGH POWER INDUSTRIAL TRANSISTORS

Comset Semiconductors 

NPN 2N3442 – 2N4347

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

VCEO(SUS)

Collector-Emitter

Sustaining Voltage (*)

IC=200 mA, IB=0

2N4347 120 -

2N3442 140 -

-

-

V

ICEO

Collector-Emitter

Current

VCE=100 V, IB=0

VCE=140 V, IB=0

2N4347 -

2N3442

-

200

200

mA

VCE=125 V, VEB(off)=1.5 V

-

- 2.0

ICEX

Collector Cutoff

Current

VCE=120 V, VEB(off)=1.5 V 2N4347

TC = 150°C

VCE=140 V, VEB(off)=1.5 V

-

10

-

5.0 mA

VCE=140 V, VEB(off)=1.5 V 2N3442

TC = 150°C

-

- 30

IEBO

Emitter Cutoff Current VBE=7 V, IC=0

2N4347

2N3442

-

- 5.0 mA

hFE

VCE(SAT)

VBE(on)

hfe

DC Current Gain

Collector-Emitter

saturation Voltage

Base-Emitter Voltage

Small Signal Current

Gain

IC=2 A, VCE=4.0 V

IC=5 A, VCE=4 V

IC=3 A, VCE=4 V

IC=10 A, VCE=4 V

IC=2 A, IB=200 mA

IC=5 A, IB=630 mA

IC=10 A, IB=200 mA

IC=2 A, VCE=4 V

IC=5 A, VCE=4 V

IC=10 A, VCE=4 V

VCE=4 V, IC=500 mA

f=1 kHz

VCE=4 V, IC=2A

f=1 kHz

15 - 60

2N4347 10

-

-

-

2N3442

20

7.5

-

-

70

-

2N4347

-

-

- 1.0

- 2.0 V

2N3442 -

- 5.0

2N4347

-

-

- 2.0

- 3.0 V

2N3442 -

- 5.7

2N4347 40 -

-

-

2N3442 12 - 72

VCER(SUS)

Collector-Emitter

Sustaining Voltage

RBE=100Ω

fT

Current Gain –

Bandwith Product

IC=100 mA

IC=200 mA

2N4347

130

-

-

-

IC=100 mA

IC=200 mA

2N3442

-

150

-

-

VCE=4 V, IC=500 mA

ftest = 50 kHz

2N4347 200 -

VCE=4 V, IC=500 mA ftest

= 50 kHz

2N3442

80

-

-

-

-

V

-

-

kHz

-

Second Breakdown VCE=67 V, IC=1.5 A

2N4347 1.0 -

-

Is/b

Collector Current

s

VCE=78 V, IC=1.5 A

2N3442 1.0 -

-

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

05/11/2012

COMSET SEMICONDUCTORS

2|3

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