2N5109 データシートの表示（PDF） - Advanced Power Technology

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2N5109

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

2N5109

FUNCTIONAL

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

G

U max

Maximum Unilateral Gain (1) IC = 50 mAdc, VCE = 15Vdc,

f = 200 MHz

-

12

-

dB

MAG

Maximum Available Gain

IC = 50 mAdc, VCE = 15Vdc,

f = 200 MHz

-

11.2

-

dB

|S21|2

Insertion Gain

IC = 50 mAdc, VCE = 15Vdc,

f = 200 MHz

9.5

10.5

-

dB

Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA

f

(MHz)

100

200

300

400

500

600

700

800

900

1000

S11

|S11|

∠φ

.082

167

.255

172

.288

132

.298

137

.368

126

.404

121

.462

116

.5.0. 3

110

.593

105

.655

95

S21

|S21|

∠φ

6.77

87

3.56

71

2.39

61

1.91

50

1.61

41

1.38

33

1.28

27

1.21

18

1.11

12

1.02

9.8

S12

|S12|

∠φ

.073

79

.135

71

.217

70

.271

62

.320

55

.390

54

.477

48

.513

38

.535

33

.604

35

S22

|S22|

.347

.259

.247

.216

.172

.174

.163

.190

.246

.320

∠φ

-30

-35

-46

-76

-94

-115

-145

176

140

122

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

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