2N5190G データシートの表示（PDF） - ON Semiconductor
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2N5190G Datasheet PDF : 6 Pages
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2N5190, 2N5191, 2N5192
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N5190
40
−
Vdc
2N5191
60
−
2N5192
80
−
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N5190
2N5191
2N5192
ICEO
−
1.0
mAdc
−
1.0
−
1.0
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190
2N5191
2N5192
2N5190
2N5191
2N5192
ICEX
−
0.1
mAdc
−
0.1
−
0.1
−
2.0
−
2.0
−
2.0
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5190
2N5191
2N5192
ICBO
−
0.1
mAdc
−
0.1
−
0.1
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
2N5190/2N5191
2N5192
2N5190/2N5191
2N5192
−
25
100
20
80
10
−
7.0
−
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
−
0.6
Vdc
−
1.4
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*JEDEC Registered Data.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
fT
2.0
−
MHz
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