2N5401(2005) データシートの表示（PDF） - Unisonic Technologies

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2N5401
(Rev.:2005)

HIGH VOLTAGE SWITCHING TRANSISTOR

Unisonic Technologies 

2N5401

TYPICAL CHARACTERISTICS

Capacitance vs. Collector-

Base Voltage

20

16

f= 1M H z

12

IE= 0

8

4

0

-10 0

- 101

-102

Collector-Base Voltage (V)

Collector Current vs. Base-Emitter

Voltage

-103

-102

VCE =-5 V

-101

-100

0 -0.2 -0.4 -0 .6 -0 .8 -1.0

Base-Emitter V oltage (V)

Current Gain-B andwidth Product

vs. Collector Current

103

V CE=- 10V

102

101

100

-10-1 -100 -101 -10 2 -10 3

Collector Current, Ic(mA)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

PNP SILICON TRANSISTOR

DC Current Gain vs.

Collector Current

103

V CE=-5V

102

10 1

100

-10 -1 -10 0 -101 -102 -103

Collector Current , Ic (mA)

Saturation Voltage vs.

Collector Current

-10 1

I C= 10* IB

-10 0

VBE(SAT)

-10 -1

VCE (SAT)

-10 -2

- 10-1 -10 0 -101

-102 -103

Collector Current , Ic (mA)

3 of 4

QW-R201-001,D

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