JAN2N5415S データシートの表示（PDF） - Microsemi Corporation

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JAN2N5415S

PNP LOW POWER SILICON TRANSISTOR

Microsemi Corporation 

2N5415, 2N5416 JAN, SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 50 mAdc, VCE = 10 Vdc

IC = 1.0 mAdc, VCE = 10 Vdc

Collector-Emitter Saturation Voltage

IC = 50 mAdc, IB = 5.0 mAdc

Base-Emitter Voltage

IC = 50 mAdc, VCE = 10 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short Circuit

Current Transfer Ratio

IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz

Forward Current Transfer Ratio

IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Input Capacitance

VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time

VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc

Turn-Off Time

VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc

SAFE OPERATING AREA

DC Tests

TC = +250C; 1 Cycle; t = 0.4 s

Test 1

VCE = 10 Vdc, IC = 1.0 Adc

Test 2

VCE = 100 Vdc, IC = 100 mAdc

Test 3

VCE = 200 Vdc, IC = 24 mAdc

Test 4

2N5415

VCE = 300 Vdc, IC = 10 mAdc

2N5416

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Forward

Symbol

hFE

VCE(sat)

VBE

hfe

hfe

Cobo

Cibo

ton

toff

Min. Max. Unit

30

120

15

2.0

Vdc

1.5

Vdc

3.0

15

25

15

pF

75

pF

1.0

µs

10

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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